New mobile DRAM standard for 4G networks offers 50% performance boost

Samsung also announces the first 4Gbit, LPDDR2 memory

By , Computerworld |  Storage, DRAM

Samsung said its DDR4 modules will be able to perform operations at speeds of up to 3.2Gbps, compared with today's DDR3 speeds of 1.6Gbps and DDR2's speeds of up to 800Mbps.

Both Samsung and Micron have announced they're preparing to ship memory modules based on the DDR4 standard.

Samsung's 4Gbit, LPDDR2 memory

In related news, Samsung on Thursday announced it has begun producing the industry's first 4Gbit, LPDDR2 memory using 20 nanometer (nm) class technology. Previously, manufacturers were using 30nm technology.

Samsung's new LPDDR2 memory chips

Based on the 4Gb components, Samsung expects to produce 2GB capacity chips with a razor-thin thickness of 0.8 millimeters, which allows manufacturers to stack four 4Gb LPDDR2 chips in a single LPDDR2 package.

The new package is about 20% thinner than 2GB packages that stack four 30nm-class 4Gb LPDDR2 chips. Also, the new 2GB package can process data at rates of up to 1066 Mbps, while spending the same amount of power as that of a previous 30nm-class 2GB package.

According to IHS iSuppli, shipments of 4Gbit LPDDR2 will also steadily increase, taking approximately 13% of total mobile DRAM shipments in 2012. The 4Gbit mobile DRAM will become the mainstream chip in the mobile DRAM market around the end of 2013, iSuppli said.

Wanhoon Hong, Samsung's executive vice president, memory sales and marketing, said the company expects to "strongly increase" the portion of 20nm-class DRAM compared to its overall DRAM output, making 4Gbit DRAM the mainstream product in DRAM production.

Lucas Mearian covers storage, disaster recovery and business continuity, financial services infrastructure and health care IT for Computerworld. Follow Lucas on Twitter at @lucasmearian or subscribe to Lucas's RSS feed. His e-mail address is

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